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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3927 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 550V(Min) *High Switching Speed *High Reliability APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage IC ICM Collector Current-Continuous w ww scs .i UNIT 900 V 550 V 7 V 10 A 15 A 5 A 120 W .cn mi e Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 10mA ; IB= 0 IC= 5A; IB= 1A B 2SC3927 MIN 550 TYP. MAX UNIT V 0.5 1.2 0.1 0.1 V V mA mA IC= 5A; IB= 1A B VCB= 800V ; IE= 0 VEB= 7V; IC= 0 IC= 5A ; VCE= 4V Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w. w sem isc IE= -1A ; VCE= 12V IE= 0 ; VCB= 10V; ftest= 1.0MHz .cn i 10 28 6 105 MHz pF 1.0 5.0 0.5 s s s IC= 5A , IB1= 0.75A; IB2= -1.5A RL= 50; VCC= 250V isc Websitewww.iscsemi.cn 2 |
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